A primary deprocessing method for semiconductors, and most components, is the use of oxygen or fluorine ions, generated at low vacuum in a RF field.  The oxygen ions will selectively dry etch carbon-based materials, while the fluorine ions will selectively etch silicon-based materials (i.e. glass and semiconductors).  The etch rate is controlled by adjustments in RF energy, selection of gas compositions (six basic gases to pick from), gas pressure and temperature.  The March RIE (reactive ion etch) allows planer etching of silicon die. The barrel etcher provides the fastest isotropic etching of samples.            Instrumentation Details: March Jupiter III RIE (Reactive Ion Etcher) ØParallel plate RIE with DC bias between plates Ø13.56MHz / 300 Watts ØDC bias applied between the plates Ø Planer (anisotropic) etching of silicon die ØWater-cooled     Instrumentation Details: Branson Barrel Reactor ØFast isotropic etching Ø13.56MHz / 500 Watts ØPlastic packaging & Polyimide overcoats