Liquid Crystal Hot Spot Detection Liquid crystal analysis characterizes the thermal profile of a semiconductor die surface to locate areas of excessive device power distribution resulting from shorted junctions, shorts between conductor lines and oxide break down.  The liquid crystal is applied to the die surface of a decapsulated semiconductor, observed using a polarized microscope while applying an electrical pulse to the area of interest for the device under test.  The temperature of the device under test is adjusted through the transition temperature of the liquid crystal; any local heating will appear as a dark pulsing ring just before the transition temperature is obtained. Electrical Microprobing Mechanical probes provide electrical contact to a component’s internal metallization enabling observation of waveforms, voltages and I-V characteristics.  The measurement is limited to structures exposed to the surface and near a micron or larger in size.          SEM Voltage Contrast and EBIC: The Hitachi S570LB Scanning Electron Microscope (SEM) is equipped with electrical feed throughs which enables operation of electrical and electronic components in the SEM.  Voltage contrast occurs when the operational voltage on the surface of a decapsulated device affects the electron beam, imaging the voltage wave form on the conductors of the device under test.  Positive voltages attract the electrons; thus, are darker than negative voltage conductors or grounds.  EBIC (electron beam induced current) is the interaction of the electron beam with semiconductor junctions, allowing the imaging of the generated current flow in reverse biased junctions, highlighting the damaged junctions.